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The MAPC-A3006-AS000 is a Gallium Nitride (GaN) on Silicon Carbide (SiC) transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of DC to 8 GHz and delivers an output power of 18 Watts. The device requires a supply voltage of 28 Volts. Packaged in a surface-mount configuration, this component is designed for high-power RF applications requiring robust performance across wide bandwidths.
Verify the specific suffix designation against official MACOM documentation to ensure correct binning or testing criteria. Confirm that the 28V supply requirement aligns with system power architecture. Validate RoHS compliance status through current datasheets before finalizing procurement specifications.
Select this component when high linearity and power density are critical at frequencies extending to 8 GHz. Ensure thermal management solutions accommodate the 18W output dissipation. Compare against alternative GaN devices regarding package footprint and biasing complexity to determine optimal fit for the target application.
This part belongs to MACOM's portfolio of discrete GaN transistors designed for space-constrained, high-performance RF circuits. It represents a solution for engineers needing wideband amplification without sacrificing power efficiency. The device complements MACOM's broader ecosystem of RF components for defense and industrial markets.
Consult official MACOM substitution guides for direct equivalents. Verify pinout compatibility and thermal pad requirements when considering alternative manufacturers' parts to prevent circuit modification.