MAPC-A3006-AS000

MAPC-A3006-AS000

$127.11
  • Description:LINEAR IC
  • Series:-

SKU:fe6f27c3c457 Category: Brand:

  
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Product Detailed Parameters

  • Description:LINEAR IC
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:GaN
  • Frequency:0Hz ~ 8GHz
  • Gain:16.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):4.6A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:18W
  • Voltage - Rated:84 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:440196
  • Supplier Device Package:440196
  • Configuration:N-Channel

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MAPC-A3006-AS000

Overview

The MAPC-A3006-AS000 is a Gallium Nitride (GaN) on Silicon Carbide (SiC) transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of DC to 8 GHz and delivers an output power of 18 Watts. The device requires a supply voltage of 28 Volts. Packaged in a surface-mount configuration, this component is designed for high-power RF applications requiring robust performance across wide bandwidths.

Feature Summary

  • Utilizes GaN-on-SiC technology for enhanced thermal and electrical performance
  • Provides high output power capability suitable for demanding RF environments
  • Supports ultra-wideband operation from DC up to 8 GHz
  • Engineered for surface-mount integration in compact designs

Applications

  • High-power radar systems
  • Electronic warfare equipment
  • Broadband communication infrastructure
  • Test and measurement instrumentation

Procurement Notes

Verify the specific suffix designation against official MACOM documentation to ensure correct binning or testing criteria. Confirm that the 28V supply requirement aligns with system power architecture. Validate RoHS compliance status through current datasheets before finalizing procurement specifications.

Selection Notes

Select this component when high linearity and power density are critical at frequencies extending to 8 GHz. Ensure thermal management solutions accommodate the 18W output dissipation. Compare against alternative GaN devices regarding package footprint and biasing complexity to determine optimal fit for the target application.

Part Context

This part belongs to MACOM's portfolio of discrete GaN transistors designed for space-constrained, high-performance RF circuits. It represents a solution for engineers needing wideband amplification without sacrificing power efficiency. The device complements MACOM's broader ecosystem of RF components for defense and industrial markets.

Replacement Considerations

Consult official MACOM substitution guides for direct equivalents. Verify pinout compatibility and thermal pad requirements when considering alternative manufacturers' parts to prevent circuit modification.

MAPC-A3006-AS000MAPC-A3006-AS000
$127.11
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