MAPC-A3007-AB000

Overview

The MAPC-A3007-AB000 is a Gallium Nitride (GaN) field-effect transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of DC to 8.0 GHz and delivers an output power of 25 Watts at a test voltage of 28 Volts. The device utilizes a surface-mount package designed for high-power RF applications, providing robust performance in broadband amplifier configurations.

Feature Summary

• Utilizes Gallium Nitride semiconductor technology for enhanced power density
• Supports broadband operation from DC up to 8.0 GHz
• Designed for high-efficiency power amplification

Applications

• Broadband power amplifier modules
• Electronic warfare systems
• Test and measurement equipment

Procurement Notes

Verify the specific suffix AB000 against the manufacturer's current datasheet to confirm pinout and thermal pad configuration. Ensure compatibility with existing PCB layouts regarding the surface-mount footprint. Confirm that the 28V operating voltage aligns with the system design requirements before integration.

Selection Notes

Select this component when a wide bandwidth extending to 8.0 GHz is required alongside significant output power capabilities. The GaN material offers advantages over traditional silicon-based solutions in terms of efficiency and thermal handling. Evaluate the specific package constraints and biasing requirements relative to the target application architecture.

Part Context

This part belongs to MACOM's portfolio of discrete GaN transistors intended for high-performance RF circuits. These components are engineered to meet the stringent demands of modern communication and defense systems requiring high linearity and power output across broad frequency spans.

Replacement Considerations

Consult official MACOM documentation for direct cross-reference part numbers. Verify electrical parameter equivalence and mechanical footprint compatibility before substituting.