Diode Arrays MBD770DWT1G product image

MBD770DWT1G

$0.39
  • Description:DIODE ARRAY SCHOTTKY 70V SC88
  • Series:-

SKU:9730e2fb4c15 Category: Brand:

  
  • Quantity
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MBD770DWT1G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOTTKY 70V SC88. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBD770DWT1G

  • Description:DIODE ARRAY SCHOTTKY 70V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):70 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 10 mA
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:250 nA @ 3 V
  • Operating Temperature - Junction:-55°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBD770DWT1G

MBD770DWT1G

Diode Arrays Overview

The MBD770DWT1G is a dual isolated Schottky diode manufactured by onsemi, designed for surface-mount applications. It features a silicon construction housed in an SC-88-6 package. The device supports a maximum repetitive reverse voltage of 70 V and a forward current of 10 mA. Key electrical characteristics include a forward voltage of 1 V, a reverse current of 200 nA, and a peak forward surge current of 1 A. Power dissipation is rated at 120 mW, with an operating temperature range spanning from -55 C to +125 C.

Diode Arrays Feature Summary

  • Dual isolated configuration within a compact SC-88-6 package
  • Schottky barrier technology for low forward voltage drop
  • High thermal stability suitable for extended temperature ranges

Diode Arrays Applications

  • Signal rectification in low-power circuits
  • Voltage clamping and protection
  • RF mixing and detection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging format matches production requirements. Confirm RoHS compliance status through official manufacturer documentation before integration. Cross-reference the component marking code with the datasheet to authenticate genuine parts during incoming inspection processes.

Diode Arrays Selection Notes

Select this component when a dual isolated Schottky topology is required in minimal space. The 70 V rating suits low-voltage signal processing tasks. Compare against single-diode alternatives if isolation between channels is not necessary for the specific circuit design constraints.

Diode Arrays Part Context

This part belongs to the MBD770DW series of small-signal Schottky diodes. It complements other onsemi offerings like the MMBD770T1G, which provides similar performance in different package configurations. The series targets portable electronics requiring efficient rectification with minimal footprint.

Diode Arrays Replacement Considerations

  • NSVMBD770DW1T1G

Diode Arrays FAQ

What is the maximum power dissipation for the MBD770DWT1G?

The maximum power dissipation is 120 mW.

Does this component support automotive qualification standards?

Official specifications do not list AEC-Q100 qualification for this specific part number.

What is the typical reverse leakage current?

The reverse current is specified as 200 nA.

MBD770DWT1GMBD770DWT1G
$0.39
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