MBR120200CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR120200CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 120 A per package. It features a Twin Tower screw-mount package with an electrically isolated base plate. The device exhibits a maximum forward voltage of 0.92 V at 60 A and 25 °C, with a thermal resistance junction-to-case of 0.80 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability with 800 A peak forward surge current rating
• Electrically isolated base plate design
• Not ESD sensitive construction

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm lead polarity configuration, as datasheets indicate reversed leads for 'R' devices. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure mounting hardware matches the Twin Tower package dimensions.

Diode Arrays Selection Notes

Select this component for applications requiring high efficiency and low forward voltage drop at 200 V blocking levels. Evaluate thermal management requirements based on the 0.80 °C/W junction-to-case resistance. Consider the Twin Tower package for screw-mount integration in high-current power supply designs.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 150 V to 200 V with a consistent 120 A current rating. These modules are designed for high-reliability power conversion applications requiring fast switching characteristics.

Diode Arrays Replacement Considerations

Direct replacements include MBR120150CT or MBR120200CT within the same product family. Verify pinout compatibility, particularly regarding lead orientation differences between standard and 'R' suffix variants.

Diode Arrays FAQ

What is the difference between MBR120200CT and MBR120200CTR?

The 'R' suffix indicates that the device has reversed leads compared to the standard CT version.

Is the MBR120200CTR sensitive to electrostatic discharge?

No, the device is explicitly documented as not being ESD sensitive.