Diode Arrays MBR200150CTR product image

MBR200150CTR

$63.89
  • Description:DIODE MOD SCHOT 150V 100A 2TOWER
  • Series:-

SKU:1b262103ae9c Category: Brand:

  
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MBR200150CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 100A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR200150CTR

  • Description:DIODE MOD SCHOT 150V 100A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR200150CTR

MBR200150CTR

Diode Arrays Overview

The MBR200150CTR is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with an average forward current rating of 200 A per package and a repetitive peak reverse voltage of 150 V. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical parameters include a maximum forward voltage of 0.88 V at 200 A and a thermal resistance of 0.45 °C/W per leg.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • Twin Tower package design for efficient mounting and heat dissipation
  • Not ESD sensitive, simplifying handling procedures

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number against official datasheets to confirm terminal configuration, as the 'R' suffix indicates reversed leads compared to standard versions. Ensure compatibility with existing thermal management systems given the specified thermal resistance values. Confirm RoHS compliance status through manufacturer documentation prior to integration into final assemblies.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low forward voltage drop. Evaluate the thermal resistance specifications against the system's cooling capabilities to ensure junction temperatures remain within the operational limit. Consider the Twin Tower package dimensions for mechanical fitment and screw-mount requirements in the target enclosure design.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 150 V to 200 V, all sharing similar current ratings and package styles. These modules are designed for high-efficiency power conversion applications where low conduction losses are critical.

Diode Arrays Replacement Considerations

Direct substitutes may include other models within the MBR200 series with matching voltage ratings, such as MBR200200CT(R). Verify that alternative components meet the same current, voltage, and thermal resistance specifications before substitution.

MBR200150CTRMBR200150CTR
$63.89
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