MBR20150CT-G

Diode Arrays Overview

The MBR20150CT-G is a silicon Schottky barrier rectifier manufactured by Comchip Technology. It features a single configuration in a TO-220AB through-hole package. Key electrical parameters include a maximum repetitive peak reverse voltage of 150 V and a continuous forward current rating of 20 A at 75°C. The device exhibits a typical forward voltage drop of 0.9 V to 1.23 V and supports a non-repetitive peak forward surge current of up to 220 A. It operates within a junction temperature range of -65°C to +175°C, with a maximum reverse leakage current of 100 µA.

Diode Arrays Feature Summary

• Utilizes silicon epitaxial planar chip technology for low forward voltage drop and high efficiency.
• Features a double common cathode configuration suitable for free-wheeling and polarity protection applications.
• Constructed with a UL 94V-0 rated flame retardant epoxy molded plastic body.

Diode Arrays Applications

• High-frequency switching power supplies
• Inverter circuits
• DC-DC converters

Diode Arrays Procurement Notes

Verify the specific suffix against official Comchip Technology documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the manufacturer part number with authorized distributor databases to avoid counterfeit components. Confirm that the TO-220AB package dimensions match your PCB footprint requirements before finalizing orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high current handling at low voltage drops. The 150 V reverse voltage rating makes it suitable for 12 V or 24 V systems. Consider the thermal management capabilities of the TO-220AB package for high-power dissipation scenarios. Verify that the 20 A continuous current rating meets the peak load demands of the target application without exceeding junction temperature limits.

Diode Arrays Part Context

This device belongs to the MBR series of Schottky diodes from Comchip Technology. It is designed as a replacement for standard PN junction rectifiers in low-voltage, high-frequency applications. The series emphasizes reduced power loss and improved system efficiency compared to conventional silicon rectifiers.

Diode Arrays Replacement Considerations

Compatible substitutes include MBR20150CT-J and MBR20150CT-G1. Verify that alternative parts maintain identical pin configurations and thermal performance specifications.