MBR20H200CT-E3/45

Diode Arrays Overview

The MBR20H200CT-E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with a maximum repetitive peak reverse voltage of 200 V and a total average forward rectified current of 20 A (10 A per diode). The device exhibits a low forward voltage drop, typically 0.75 V at 20 A, and a maximum reverse leakage current of 5.0 µA at working peak reverse voltage. It supports a peak forward surge current of 290 A and operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• Guarding structure provides enhanced overvoltage protection and long-term reliability
• Low forward voltage drop ensures high efficiency and reduced power loss
• High frequency operation capability suitable for demanding switching applications
• Compliant with RoHS 2002/95/EC and WEEE 2002/96/EC directives

Diode Arrays Applications

• High frequency inverters
• Freewheeling diodes in power circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the component status as this specific part number may be discontinued or subject to change. Confirm that the E3 suffix indicates consumer grade compliance with the JESD 201 class 1A whisker test. Ensure the ordering code matches the required TO-220AB package and tube delivery mode. Cross-reference the datasheet revision date to confirm electrical characteristics remain consistent with design requirements.

Diode Arrays Selection Notes

Select this component for designs requiring robust high-voltage rectification with minimal conduction losses. The dual common-cathode configuration simplifies circuit layout for center-tapped or full-wave applications. Verify thermal management capabilities, as the device handles significant current loads. Consider the operating temperature range and surge current ratings to ensure reliability under transient conditions.

Diode Arrays Part Context

This device belongs to the MBR20HxxCT series of dual common-cathode Schottky barrier rectifiers from Vishay. It utilizes metal-silicon junction technology for majority carrier conduction, resulting in faster switching speeds compared to standard p-n junction rectifiers. The series is designed for efficiency and ruggedness in various power conversion topologies.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers include MBRF20H200CT-E3/45 (ITO-220AB package) and SB20H200CT-1E3/45 (TO-262AA package). These alternatives share identical electrical specifications but differ in physical package dimensions and mounting styles.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current per diode?

The maximum non-repetitive peak forward surge current per diode is 290 A, measured under an 8.3 ms single half sine-wave superimposed on rated load.

Does the E3 suffix affect the electrical performance of the diode?

No, the E3 suffix denotes environmental compliance, specifically meeting the JESD 201 class 1A whisker test for consumer grade components, without altering the electrical parameters.

What is the typical junction capacitance at 4.0 V and 1 MHz?

The typical junction capacitance is 250 pF when tested at 4.0 V reverse voltage and 1 MHz frequency.