Diode Arrays MBR50030CTR product image

MBR50030CTR

$61.55
  • Description:DIODE MOD SCHOTT 30V 250A 2TOWER
  • Series:-

SKU:200f280cb1b7 Category: Brand:

  
  • Quantity
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MBR50030CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 250A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR50030CTR

  • Description:DIODE MOD SCHOTT 30V 250A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR50030CTR

MBR50030CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR50030CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 30 V and an average forward current rating of 500 A per package. The device exhibits a maximum forward voltage of 0.75 V per leg and a thermal resistance junction-to-case of 0.30 °C/W per leg. It supports an operating temperature range from -55 °C to 150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • ESD insensitive design for simplified handling
  • Twin Tower package configuration for efficient mounting

Diode Arrays Applications

  • Power conversion systems
  • DC-DC converters
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variations may exist between CT and CTR configurations. Confirm that the component meets required RoHS compliance standards before integration. Ensure the supplier provides valid traceability data and authentic manufacturer markings to guarantee component integrity and reliability in final assembly.

Diode Arrays Selection Notes

Select this component when a 30 V blocking voltage and 500 A continuous current capacity are required. The low forward voltage drop contributes to reduced conduction losses. The Twin Tower package facilitates direct screw mounting to heatsinks. Verify that the thermal management system can maintain the junction temperature within the specified -55 °C to 150 °C operational range during high-load scenarios.

Diode Arrays Part Context

This module belongs to the MBR500 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 20 V to 40 V, all sharing the same 500 A current rating and Twin Tower mechanical form factor. This standardization allows for flexible design scaling across different voltage requirements while maintaining consistent thermal and mechanical interface characteristics.

Diode Arrays Replacement Considerations

Direct substitutes include other MBR500 series variants such as MBR50020CTR or MBR50040CTR, provided the voltage rating aligns with the circuit requirements. Cross-brand replacements require careful verification of forward voltage, thermal resistance, and package dimensions to ensure compatibility.

MBR50030CTRMBR50030CTR
$61.55
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