MBT35200MT1

Single Bipolar Transistors Overview

The MBT35200MT1 is a PNP silicon small-signal transistor manufactured by onsemi, designed for low saturation applications. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 35 V. The device utilizes a TSOP-6 surface-mount package (CASE 318G-02) with six terminals. Key electrical specifications include a minimum DC current gain (hFE) of 100 and a maximum operating temperature of 150 °C. This component is classified as a single-configuration bipolar junction transistor suitable for high-current switching tasks.

Single Bipolar Transistors Feature Summary

• Engineered for low saturation performance to enhance efficiency in switching circuits
• Capable of handling high continuous collector currents up to 2 A
• Utilizes a compact surface-mount package for automated PCB assembly

Single Bipolar Transistors Applications

• High-current switching applications requiring low voltage drop
• Power management circuits utilizing PNP configurations
• Signal processing stages demanding high current gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and RoHS compliance status before procurement, as datasheets indicate potential variations in lead-free certification. Confirm the package code matches CASE 318G-02 to ensure mechanical compatibility. Cross-reference the manufacturer part number with official onsemi documentation to avoid counterfeit components or incorrect revisions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current capacity and low saturation voltage is required. Ensure the circuit design accommodates the 35 V collector-emitter voltage limit. Verify that the thermal management strategy supports the specified maximum operating temperature of 150 °C. Compare the hFE minimum of 100 against base drive requirements to guarantee proper saturation.

Single Bipolar Transistors Part Context

This component belongs to the Bipolar Transistors - BJT Low Saturation category from onsemi. It is distinct from general-purpose transistors by its optimized structure for reduced voltage drop during conduction. The TSOP-6 package differentiates it from standard three-terminal SOT devices, offering additional pins likely for enhanced thermal dissipation or specific pinout configurations.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements must match the PNP type, 2 A current rating, 35 V voltage rating, and TSOP-6 package dimensions. Verify pinout compatibility and thermal characteristics before implementation.