MCACD20N10Y-TP

FET, MOSFET Arrays Overview

The MCACD20N10Y-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes split gate trench technology and features a DFN5060-8D surface-mount package. The device supports a drain-source voltage of 100 V and a continuous drain current of 20 A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 22 mΩ at VGS=10V and ID=15A, and a gate threshold voltage ranging from 1.0 V to 2.5 V. Thermal resistance is specified at 4°C/W junction-to-case and 45°C/W junction-to-ambient. The component operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with split gate trench technology for high density cell design
• Low on-resistance characteristics achieved through optimized cell architecture
• High-speed switching capabilities suitable for efficient power conversion applications
• Moisture sensitivity level 1 compliance with halogen-free green device construction

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring dual channel isolation or synchronous rectification
• Power management systems utilizing low profile surface mount packaging
• Automotive electronics compliant with AEC-Q101 standards
• Industrial motor control interfaces requiring robust thermal performance

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the MCACD20N10Y-TP components by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks to circuit reliability. Ensure that the ordering suffix indicates RoHS compliance and confirm the specific tape and reel quantity matches your production requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for 100 V applications. The DFN5060-8D package offers a balance between thermal dissipation and board space efficiency. Consider the 22 mΩ on-resistance limit for conduction loss calculations and verify that the 20 A continuous current rating aligns with the thermal management strategy of the target system design.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs from Micro Commercial Components. It shares the DFN5060-8D footprint family but differs in internal die specifications compared to single-channel variants like the MCAC5D2N10Y-TP. The dual configuration allows for shared substrate connections, reducing overall parasitic inductance in bridge topologies compared to discrete single devices.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements within the same package must be verified against the datasheet electrical limits. Substitutes should match the 100 V rating and dual N-channel topology. Cross-referencing thermal resistance values is critical to ensure equivalent heat dissipation capabilities in the existing PCB layout.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the MCACD20N10Y-TP?

The maximum pulsed drain current (IDM) is rated at 80 A, as specified in the absolute maximum ratings section.

Does the MCACD20N10Y-TP meet automotive qualification standards?

Yes, the datasheet indicates that the device meets AEC-Q101 qualification standards for automotive applications.

What is the typical reverse recovery charge (Qrr) for the body diode?

The typical reverse recovery charge (Qrr) is listed as 30 nC under test conditions of IF=10A and dIF/dt=100A/μs.