MCACD30N04HE3-TP

FET, MOSFET Arrays Overview

The MCACD30N04HE3 is a dual N-channel MOSFET utilizing Trench Power LV technology. It features a PDFN5060-8D package with a Drain-Source Voltage of 40V and a continuous Drain Current of 30A at Tc=25°C. The device exhibits a low RDS(on) of 10mΩ at VGS=10V and ID=20A, alongside a Gate Charge of 23nC. It operates within a junction temperature range of -55°C to +150°C and includes an internal body diode with a Reverse Recovery Time of 12ns.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact PDFN5060-8D package for efficient heat dissipation.
• AEC-Q101 qualified for automotive reliability standards.
• High-density cell design ensures low on-resistance for improved efficiency.
• Halogen-free "Green" device compliant with RoHS directives.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the MCACD30N04HE3 by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; MCC does not provide warranty coverage for parts acquired through unauthorized sources. Ensure the ordering suffix matches the required Tape & Reel packaging quantity of 5Kpcs per reel before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in a space-constrained environment. The PDFN5060-8D package offers superior thermal performance compared to standard SMD packages. Consider the 40V rating and 30A current capacity for low-voltage high-current switching applications requiring AEC-Q101 compliance.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs from Micro Commercial Components. It utilizes split-gate trench technology to achieve low gate charge and fast switching speeds. The device is designed for industrial and automotive grade applications, providing a robust alternative to single-channel solutions where board space is limited.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual N-channel topology, 40V rating, and PDFN5060-8D footprint. Verify thermal resistance and pinout compatibility before substitution.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Is the device suitable for automotive applications?

Yes, the MCACD30N04HE3 is AEC-Q101 qualified.

What is the reverse recovery time of the internal body diode?

The typical reverse recovery time (trr) is 12ns.