FET, MOSFET Arrays MCCD2007-TP product image

MCCD2007-TP

  • Description:MOSFET 2N-CH 20V 7A 6DFN
  • Series:-

SKU:8c5a2858c222 Category: Brand:

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MCCD2007-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET 2N-CH 20V 7A 6DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCCD2007-TP

  • Description:MOSFET 2N-CH 20V 7A 6DFN
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 10V
  • Power - Max:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WFDFN Exposed Pad
  • Supplier Device Package:DFN2030-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCCD2007-TP

MCCD2007-TP

FET, MOSFET Arrays Overview

The MCCD2007-TP is a dual N-channel power MOSFET utilizing advanced trench technology. It features a DFN2030-6 package with a maximum drain-source voltage of 20 V and continuous drain current of 7 A. The device supports a pulsed drain current of 30 A and operates within a junction temperature range of -55 to +150 °C. Key electrical characteristics include a typical on-resistance of 20 mΩ at VGS=10V, total gate charge of 15 nC, and thermal resistance of 125 °C/W.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration in a compact DFN2030-6 surface-mount package
  • Advanced trench MOSFET process technology for low on-state resistance
  • Moisture sensitivity level 1 rating for reliable handling

FET, MOSFET Arrays Applications

  • Power load switching circuits
  • DC-DC converter topologies
  • Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing components. The standard part number includes the -TP designation for tape and reel packaging. An optional -HF suffix indicates halogen-free availability upon request. Ensure procurement from authorized distributors to guarantee genuine parts and full traceability as per manufacturer guidelines.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a dual N-channel MOSFET in a small footprint. The 20 V rating suits low-voltage logic-level applications. Evaluate the 20 mΩ on-resistance against thermal requirements, considering the 125 °C/W junction-to-ambient thermal resistance. Confirm that the 7 A continuous current capability meets the circuit's operational demands.

FET, MOSFET Arrays Part Context

This component belongs to Micro Commercial Components' discrete transistor lineup. It is designed for general-purpose switching applications where space efficiency is critical. The DFN2030-6 package provides a balance between thermal performance and board area reduction compared to larger traditional packages.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the marking code on the MCCD2007-TP?

The device marking is '2007'.

How does the gate threshold voltage vary with temperature?

The datasheet provides transfer characteristics showing the relationship between gate-source voltage and drain current at different ambient temperatures (25°C and 100°C).

Is the dynamic parameter data subject to production testing?

No, dynamic parameters such as capacitance and switching times are guaranteed by design and are not subject to production testing.

MCCD2007-TPMCCD2007-TP

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