MCH6601-TL-E

Description：MOSFET 2P-CH 30V 0.2A 6MCPH
Series：-

SKU:e60a773e653b Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

MCH6601-TL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 0.2A 6MCPH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCH6601-TL-E

Description：MOSFET 2P-CH 30V 0.2A 6MCPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：200mA
Rds On (Max) @ Id, Vgs：10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：1.43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：7.5pF @ 10V
Power - Max：800mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, Flat Leads
Supplier Device Package：6-MCPH
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MCH6601-TL-E

MCH6601-TL-E

FET, MOSFET Arrays Overview

The MCH6601-TL-E is a dual P-Channel Power MOSFET from onsemi, housed in an MCPH6 package. It features a drain-to-source voltage of -30V and a continuous DC drain current of -0.2A. The device exhibits low ON-resistance, with typical values of 10.4Ω at VGS=-4V and 54Ω at VGS=-1.5V. Switching performance includes a turn-on delay of 24ns and a fall time of 130ns. Total gate charge is typically 1.43nC. The component supports a junction temperature up to 150°C and allows for 1.5V drive operation.

FET, MOSFET Arrays Feature Summary

Composite configuration containing two P-channel MOSFETs within a single package to facilitate high-density mounting.
Ultrahigh-speed switching capabilities suitable for rapid signal transitions.
Capable of operation with a 1.5V gate drive voltage.

FET, MOSFET Arrays Applications

High-density surface mount circuits requiring compact dual transistor solutions.
Low-voltage power management applications utilizing 1.5V drive signals.
Switching circuits optimized for fast transition times.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-E corresponds to the tape and reel packaging format containing 3,000 pieces per reel. Confirm that the MCPH6 package dimensions align with the target land pattern design. Ensure handling procedures account for the specified ESD immunity characteristics during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel configuration is required in a minimal footprint. Evaluate the RDS(on) specifications against the intended load current and gate drive voltage levels. Consider the thermal dissipation limits relative to the PCB substrate area available for heat spreading.

FET, MOSFET Arrays Part Context

This part belongs to the MCH6601 series of dual power MOSFETs manufactured by onsemi. It utilizes the MCPH6 package, which is equivalent to JEITA/JEDEC standards SC-88, SC-70-6, and SOT-363. The device is designed for applications prioritizing space efficiency and switching speed.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual P-channel topology, -30V rating, and MCPH6/SOT-363 package. Verify electrical parameters such as RDS(on) and switching times against the original datasheet requirements before implementation.