MCH6605-TL-E

FET, MOSFET Arrays Overview

The MCH6605-TL-E is a P-Channel Silicon MOSFET composite device containing two transistors in an MCPH6 (SOT-363) package. It features a Drain-to-Source Voltage of -50 V and a continuous Drain Current of -0.14 A. The component operates with a Gate-to-Source Voltage of ±20 V and has a maximum allowable power dissipation of 0.8 W at 25°C. Electrical characteristics include a static on-state resistance of 17 to 22 Ω at VGS=-10V, and a cutoff voltage ranging from -1 to -2.5 V. Switching performance includes a turn-on delay time of 13 ns and a rise time of 10 ns.

FET, MOSFET Arrays Feature Summary

• Composite configuration integrating two P-channel MOSFETs within a single package for high-density mounting
• Ultrahigh-speed switching capabilities suitable for rapid signal processing applications
• Optimized for low-voltage drive operations with a 4V drive capability

FET, MOSFET Arrays Applications

• General-purpose switching device applications
• High-density surface mount circuit designs
• Low-voltage logic interface circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Sanyo Semiconductor. Confirm that the 'TL-E' suffix corresponds to the tape-and-reel packaging format containing 3,000 pieces per reel. Ensure the procurement source provides documentation confirming lead-free compliance and RoHS status consistent with the original datasheet specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET solution is required in a minimal footprint. The MCPH6 package supports automated surface-mount assembly. Designers must account for the specific gate charge values and ensure the driving circuit can handle the specified cutoff voltage range. Verify thermal management requirements against the 0.8 W power dissipation limit under intended operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the MCH6605 series of composite MOSFETs. Originally manufactured by Sanyo Semiconductor, the product line is now managed under the onsemi brand following corporate acquisitions. The device maintains the original electrical specifications and pinout configurations defined in the legacy Sanyo data sheets.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other SC-88 or SOT-363 packaged dual P-channel MOSFETs. Verify that replacement parts match the -50 V breakdown voltage and similar on-resistance characteristics. Cross-reference pinouts to ensure Source, Gate, and Drain assignments align with the original MCPH6 layout.