MCH6662-TL-W

FET, MOSFET Arrays Overview

The onsemi MCH6662-TL-W is a dual N-channel enhancement mode MOSFET housed in a SOT-363 (SC-88) surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 1.8 A. The device exhibits a maximum on-resistance of 378 mΩ, with a gate threshold voltage up to 2.6 V and a maximum power dissipation of 800 mW. Designed for low-voltage applications, it operates within a temperature range extending to +150 °C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel transistors within a compact six-pin footprint.
• Enhancement mode operation optimized for low-voltage switching applications.
• Surface-mount construction suitable for automated assembly processes.

FET, MOSFET Arrays Applications

• Low-voltage signal switching circuits
• Battery protection modules
• Portable electronic device power management

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status through current datasheets. Ensure the component meets environmental regulations applicable to your region before integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate the 378 mΩ on-resistance against thermal constraints at expected load currents. Compare the 30 V breakdown voltage against system supply rails to ensure adequate safety margins during transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFETs designed for portable electronics. The SOT-363 package allows for high-density PCB layouts. It serves as a discrete solution for switching tasks where integrated circuits may lack sufficient current handling or voltage ratings.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for verified equivalents. Generic cross-references may differ in pin configurations or electrical characteristics. Validate any alternative against the original datasheet specifications prior to implementation.