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MCP14E5T-E/SN
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply：4.5V ~ 18V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：4A, 4A
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：15ns, 18ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MCP14E5T-E/SN is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It features independent inverting and non-inverting outputs capable of sourcing and sinking 4A peak current. The device operates within a supply voltage range of 4.5V to 18V. Typical propagation delays are characterized by rise times of 15ns and fall times of 18ns. It supports input logic levels with VIL of 0.8V and VIH of 2.4V. The component is housed in an 8-SOIC package and is designed for surface-mount installation.
Feature Summary
- Dual independent channel configuration providing both inverting and non-inverting output signals
- High peak output current capability of 4A for efficient MOSFET switching
- Integrated enable pin functionality for power management control
Applications
- Automotive industry power electronics
- Industrial motor drive systems
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging containing 3300 units, distinct from tube-packaged variants. Confirm the SOIC-8 footprint matches the target PCB design. Ensure the operating temperature range aligns with system requirements. Cross-reference the manufacturer part number against official Microchip documentation to avoid counterfeit components.
Selection Notes
Select this component when dual low-side driving with complementary signal paths is required. The 4A output current suits medium-power MOSFET applications. Consider the 15ns/18ns switching speeds for high-frequency operations. Verify that the 4.5V minimum supply voltage meets the system's logic level constraints before integration.
Part Context
This part belongs to the MCP14E5 series of dual complementary MOSFET drivers. It shares functional similarities with the MCP14E5-E/SN but differs in packaging format. The series is designed for robust gate driving in environments requiring reliable switching performance and compact form factors.
Replacement Considerations
The MCP14E5-E/SN serves as a direct functional substitute, differing primarily in bulk packaging rather than electrical characteristics. Other dual low-side drivers may require circuit redesign due to varying current capabilities or pin configurations.
