MD7P19130HR3

Overview

The MD7P19130HR3 is a dual N-channel LDMOS RF power transistor manufactured by NXP USA Inc. It operates at a test voltage of 28 V and a current of 1.25 A, delivering 40 W output power at 1.99 GHz with 20 dB gain. The device features a 65 V rated voltage and utilizes the NI-780S-4L surface-mount package. Classified under RF FETs, this component is designed for high-frequency radio frequency applications.

Feature Summary

• Dual configuration LDMOS technology for balanced RF performance
• Optimized for operation at 1.99 GHz frequencies
• Surface-mount NI-780S-4L package design

Applications

• RF power amplification in communication systems
• Base station transmitter modules
• Industrial, scientific, and medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized NXP distributors due to discontinued status. Confirm package integrity upon receipt as the NI-780S-4L requires careful handling. Check RoHS compliance documentation against specific project requirements. Validate datasheet revisions prior to integration into final designs.

Selection Notes

Select this part for applications requiring 40 W output at 1.99 GHz. Ensure thermal management supports the power dissipation characteristics. Compare electrical parameters against system impedance requirements. Verify compatibility with existing biasing networks for 28 V operation.

Part Context

This component belongs to the MD7P1 series of RF power transistors. It represents an evolution in LDMOS technology for cellular infrastructure. The device addresses the need for high linearity and efficiency in modern wireless communication standards.

Replacement Considerations

Consult official NXP substitution guides for compatible alternatives. Verify pinout and thermal pad configurations match existing PCB layouts. Evaluate electrical parameter equivalence before implementation.