MGB20N36CL

Overview

The MGB20N36CL is a high-voltage N-channel Power MOSFET manufactured by onsemi. It features a planar trench technology designed for low on-resistance and fast switching speeds. The device is housed in a TO-247AD package, providing robust thermal performance for high-power applications. Key electrical characteristics include a drain-source voltage (V_DSS) of 360 V and a continuous drain current (I_D) of 20 A at 25°C. The typical on-state resistance (R_DS(on)) is specified at 0.18 Ω with a gate-source voltage of 10 V. These parameters make it suitable for industrial motor control and power supply designs requiring efficient high-voltage switching.

Feature Summary

• Planar trench technology for optimized specific on-resistance
• High voltage capability suitable for demanding power environments
• Fast switching characteristics to minimize switching losses
• Robust TO-247AD package for effective heat dissipation

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• DC-DC converters for high-power systems
• Synchronous rectification in power factor correction circuits

Procurement Notes

Verify the exact ordering suffix and tape/reel specifications against the official onsemi datasheet before procurement. Ensure that the component meets the required RoHS compliance standards for your specific manufacturing process. Confirm lead time availability directly with authorized distributors as production schedules may vary. Always request a certificate of conformity to validate authenticity and traceability of the silicon wafers used in fabrication.

Selection Notes

Select this component when designing circuits requiring a balance between high voltage blocking capability and moderate current handling. Compare the R_DS(on) value at your operating junction temperature against alternative devices to ensure thermal management requirements are met. Consider the gate charge (Q_g) specifications if high-frequency switching is critical to your application efficiency. Verify that the TO-247AD package dimensions match your PCB footprint and heatsinking constraints.

Part Context

This part belongs to onsemi's high-voltage MOSFET portfolio, which focuses on reliability and efficiency for industrial and automotive applications. It complements other devices in the series offering varying voltage and current ratings. The MGB20N36CL is engineered to replace older generation planar MOSFETs with improved figure-of-merit metrics. Its design aligns with industry standards for ruggedness in electrically noisy environments.

Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class from onsemi or other manufacturers. Ensure that any substitute maintains equal or lower R_DS(on) and similar gate charge characteristics to preserve circuit performance. Verify that the replacement package matches the mechanical and thermal requirements of the existing design.