MGSF3454XT1

Single FETs, MOSFETs Overview

The MGSF3454XT1 is a small-signal N-channel silicon MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 1.75A. The device exhibits a low on-resistance (Rds(on)) of 70mΩ at a gate-source voltage (Vgs) of 4.5V. Key electrical characteristics include an input capacitance (Ciss) of 345pF, a reverse transfer capacitance (Crss) of 140pF, and a total gate charge (Qg) of 15nC measured at 10V.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode metal-oxide semiconductor field-effect transistor
• Low on-state resistance for efficient power switching
• Fast switching capabilities with defined gate charge parameters

Single FETs, MOSFETs Applications

• General-purpose low-voltage power switching
• Load switching in consumer electronics
• DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XT1 to confirm tape-and-reel packaging configuration. Ensure the component meets RoHS compliance requirements for your manufacturing process. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or thermal characteristics before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30V breakdown voltage and up to 1.75A continuous current handling. The 70mΩ Rds(on) specification makes it suitable for low-loss switching where efficiency is critical. Consider the 345pF input capacitance when designing gate drive circuits to ensure adequate switching speed without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of single N-channel MOSFETs designed for general-purpose switching applications. It utilizes standard silicon technology within the metal-oxide semiconductor family. The device is intended for use in compact designs where moderate current capacity and low voltage operation are required.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible parts with matching 30V Vds and similar Id ratings. Verify pinout compatibility and package dimensions if replacing in existing footprints. Ensure thermal performance and gate charge characteristics align with the original design constraints.