MHT1004GNR3

MHT1004GNR3

$116.52
  • Description:RF MOSFET LDMOS 32V OM780-2
  • Series:-

SKU:5136505d98b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V OM780-2
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.45GHz
  • Gain:15.2dB
  • Voltage - Test:32 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:280W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:OM-780-2G
  • Supplier Device Package:OM-780-2 Gull
  • Configuration:-

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MHT1004GNR3

Overview

The MHT1004GNR3 is an RF power LDMOS field-effect transistor manufactured by Freescale Semiconductor. It operates at a frequency of 2.45 GHz with a rated voltage of 32 V and a maximum current of 100 mA. The device delivers an output power of 280 W and provides a gain of 15.2 dB. It is housed in the OM-780-2G gull-wing package, designed for chassis mounting. This component is classified as a lead-free and RoHS-compliant RF power FET suitable for high-power radio frequency applications.

Feature Summary

  • High-output power capability of 280W for efficient signal amplification
  • Optimized performance at 2.45 GHz industrial, scientific, and medical (ISM) frequencies
  • Robust LDMOS construction ensuring reliability in demanding RF environments

Applications

  • Industrial heating and dielectric heating systems
  • Plasma generation and processing equipment
  • Medical diathermy devices

Procurement Notes

Verify that the received components match the MHT1004GNR3 part number and Freescale Semiconductor branding. Confirm the OM-780-2G package type and gull-wing terminal configuration. Ensure documentation supports RoHS compliance and lead-free status. Inspect for physical damage to the chassis mount base and terminals before integration into RF circuits.

Selection Notes

Select this component when designing systems requiring 280W output at 2.45 GHz. Consider the 32V rated voltage and 100mA current limits during circuit design. The OM-780-2G package necessitates chassis mounting solutions. Evaluate thermal management requirements due to high power dissipation in LDMOS structures for continuous wave operations.

Part Context

This RF power transistor belongs to the family of LDMOS devices used in high-power amplification. Freescale Semiconductor specializes in such components for industrial and medical RF applications. The MHT1004GNR3 variant specifically targets the 2.45 GHz band, distinguishing it from other frequency-specific models within the broader product line.

Replacement Considerations

Cross-reference with NXP Semiconductors equivalents if Freescale supply is unavailable. Verify pin compatibility and thermal resistance values for direct substitution. Ensure the replacement maintains the 280W output and 15.2dB gain specifications at 2.45 GHz.

FAQ

What is the operating frequency range?

The device is optimized for operation at 2.45 GHz.

What is the maximum output power?

The MHT1004GNR3 provides an output power of 280W.

MHT1004GNR3MHT1004GNR3
$116.52
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