SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MHT1004GNR3 is an RF power LDMOS field-effect transistor manufactured by Freescale Semiconductor. It operates at a frequency of 2.45 GHz with a rated voltage of 32 V and a maximum current of 100 mA. The device delivers an output power of 280 W and provides a gain of 15.2 dB. It is housed in the OM-780-2G gull-wing package, designed for chassis mounting. This component is classified as a lead-free and RoHS-compliant RF power FET suitable for high-power radio frequency applications.
Verify that the received components match the MHT1004GNR3 part number and Freescale Semiconductor branding. Confirm the OM-780-2G package type and gull-wing terminal configuration. Ensure documentation supports RoHS compliance and lead-free status. Inspect for physical damage to the chassis mount base and terminals before integration into RF circuits.
Select this component when designing systems requiring 280W output at 2.45 GHz. Consider the 32V rated voltage and 100mA current limits during circuit design. The OM-780-2G package necessitates chassis mounting solutions. Evaluate thermal management requirements due to high power dissipation in LDMOS structures for continuous wave operations.
This RF power transistor belongs to the family of LDMOS devices used in high-power amplification. Freescale Semiconductor specializes in such components for industrial and medical RF applications. The MHT1004GNR3 variant specifically targets the 2.45 GHz band, distinguishing it from other frequency-specific models within the broader product line.
Cross-reference with NXP Semiconductors equivalents if Freescale supply is unavailable. Verify pin compatibility and thermal resistance values for direct substitution. Ensure the replacement maintains the 280W output and 15.2dB gain specifications at 2.45 GHz.
The device is optimized for operation at 2.45 GHz.
The MHT1004GNR3 provides an output power of 280W.