MHT1004NR3

Overview

The MHT1004NR3 is an RF power LDMOS transistor manufactured by NXP USA Inc. Designed for high-frequency applications, this component operates at a typical frequency of 2.45 GHz. It features a maximum drain voltage of 32 V and a gate current rating of 100 mA. The device delivers a power output of 280 W with a gain of 15.2 dB and a typical drain efficiency of 57.9%. Packaged in the OM-780-2 surface mount format, it utilizes LDMOS process technology to ensure robust performance in demanding RF environments.

Feature Summary

• High-power RF capability utilizing LDMOS technology
• Optimized for operation at 2.45 GHz frequencies
• Surface mount packaging for automated assembly

Applications

• RF power amplification systems
• Industrial, Scientific, and Medical (ISM) band equipment
• Wireless communication infrastructure

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm package variant and tape-and-reel specifications. Ensure compatibility with OM-780-2 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet release notes before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high output power at 2.45 GHz. Consider thermal management solutions due to the 280 W power handling capacity. Evaluate the 32 V drain voltage limit against system supply rails. Verify that the 15.2 dB gain meets the system's signal chain requirements without excessive external amplification stages.

Part Context

This part belongs to NXP's portfolio of RF power transistors designed for broadband and narrowband applications. It complements other LDMOS devices in the series, offering a balance of power density and efficiency. The OM-780-2 package is standard for high-power RF modules, facilitating integration into larger amplifier assemblies used in industrial and communications sectors.

Replacement Considerations

Consult NXP technical support for direct cross-reference alternatives. Verify pinout compatibility and thermal characteristics if substituting with similar LDMOS devices from other manufacturers. Ensure equivalent gain and efficiency metrics are maintained to preserve system performance.