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Product Detailed Parameters
- Description：RF MOSFET LDMOS 32V 16DFN
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.45GHz
- Gain：18.6dB
- Voltage - Test：32 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：110 mA
- Power - Output：12.5W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：16-VDFN Exposed Pad
- Supplier Device Package：16-DFN (4x6)
- Configuration：-
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Overview
The MHT1108NT1 is a 12.5 W continuous wave RF power LDMOS transistor designed for the 2450 MHz ISM band. It operates at a drain-source voltage of 28 Vdc with a quiescent current of 110 mA, delivering a typical gain of 18.6 dB and power added efficiency of 56.3%. The device features integrated ESD protection and supports case operating temperatures up to 150°C.
Feature Summary
- Characterized using series equivalent large-signal impedance parameters and common source S-parameters
- Qualified for operation at 32 Vdc with integrated electrostatic discharge protection
- Capable of sustaining high junction and case operating temperatures
Applications
- Consumer cooking as PA driver
- Commercial cooking as PA driver
Procurement Notes
Verify the specific ordering suffix T1 against the datasheet to confirm tape and reel specifications. Ensure the procurement matches the exact DFN 4x6 package dimensions and pinout configuration required for the target application design.
Selection Notes
Select this component for applications requiring high efficiency in the 2450 MHz ISM band. Evaluate thermal management requirements carefully, as the device supports high junction temperatures. Confirm that the 28 Vdc operating voltage aligns with the system power supply constraints.
Part Context
This part belongs to NXP's RF Power LDMOS Transistor family, specifically engineered for consumer and commercial cooking applications. It serves as a power amplifier driver within the 2450 MHz industrial, scientific, and medical frequency band.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Do not assume cross-compatibility with other models without verifying electrical characteristics and pin configurations.
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum drain-source voltage (VDSS) rating is +65 Vdc.
How does the device perform under load mismatch conditions?
The device shows no degradation when subjected to a VSWR greater than 10:1 at all phase angles with 3 dB overdrive at 32 Vdc.
What is the thermal resistance from junction to case?
The thermal resistance (RθJC) is 3.8 °C/W under specified test conditions.
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