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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247AB
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 50A
- Power - Max：283 W
- Switching Energy：1.89mJ (on), 550µJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：23ns/83ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：148 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AB
- Grade：-
- Qualification：-
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Overview
The MIW50N65AS2Y-BP is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It belongs to the MIW50N65 series and utilizes silicon technology for high-power switching applications. The component is housed in a TO-247AB-3 package, designed for through-hole mounting on printed circuit boards. It features a single configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 50 A at 25°C. The device supports a power dissipation capacity of 326 W and operates within a temperature range from -40°C to +175°C.
Feature Summary
- High-voltage capability suitable for demanding power electronics environments
- Robust thermal performance allowing operation up to 175°C junction temperature
- Through-hole construction ensuring secure mechanical attachment
Applications
- Industrial motor drives and control systems
- Uninterruptible power supply (UPS) inverters
- Switch-mode power supplies (SMPS)
- Induction heating equipment
Procurement Notes
Verify the specific suffix AS2Y against official MCC documentation to confirm pinout and electrical characteristics match your design requirements. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure the TO-247AB-3 package dimensions align with your PCB footprint and thermal management strategy.
Selection Notes
Select this IGBT when a 650V blocking voltage and 50A continuous current are required in a standard through-hole package. Consider the 326W power dissipation limit and ensure adequate heatsinking to maintain junction temperatures below 175°C. Compare saturation voltage specifications against alternative devices in the same voltage class for efficiency optimization.
Part Context
This component is part of the MIW50N65 family from Micro Commercial Components, which includes variants such as MIW50N65AT1Y-BP and MIW50N65RA-BP. These parts share similar voltage and current ratings but may differ in internal cell structure or packaging details. The MIW50N65F-BP serves as a related model within the same product line offering comparable performance metrics.
Replacement Considerations
Direct substitutes include other MIW50N65 series variants like MIW50N65AT1Y-BP or MIW50N65RA-BP, provided their specific electrical parameters and pin configurations are compatible. Cross-reference with MIW50N65F-BP if package compatibility is critical.
