MJ11013 PBFREE

Single Bipolar Transistors Overview

The MJ11013 PBFREE is a PNP Darlington power transistor manufactured by Central Semiconductor Corp. It features a TO-3 through-hole package and operates with a collector current of 30 A and a collector-emitter voltage of 90 V. The device has a transition frequency of 4 MHz and a maximum power dissipation of 200 W. It is designed for general-purpose amplifier applications.

Single Bipolar Transistors Feature Summary

• PNP Darlington configuration
• High current capability
• Through-hole mounting

Single Bipolar Transistors Applications

• General purpose amplifier output devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix requirements when requesting lead-free plated devices, as indicated in manufacturer documentation. Confirm mechanical specifications and lead dimensions against the official datasheet to ensure compatibility with existing PCB layouts and thermal management systems before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for high-power applications requiring substantial current handling capabilities. Ensure the design accommodates the thermal requirements associated with 200 W power dissipation. Verify that the 90 V voltage rating meets the circuit's operational limits and that the TO-3 package fits the available space constraints.

Single Bipolar Transistors Part Context

This part belongs to the family of bipolar junction transistors (BJTs) produced by Central Semiconductor. It serves as a complementary device in amplifier circuits, often paired with NPN counterparts. The TO-3 package provides robust mechanical stability and heat dissipation suitable for industrial and audio equipment.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement matches the PNP Darlington type, 30 A current rating, and 90 V voltage specification.