MJ2955G

$4.89

Description：TRANS PNP 60V 15A TO204
Series：-

SKU:bb52d4d714b9 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJ2955G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 15A TO204. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJ2955G

Description：TRANS PNP 60V 15A TO204
Series：-
Mfr：onsemi
Package：Tray
Transistor Type：PNP
Current - Collector (Ic) (Max)：15 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：3V @ 3.3A, 10A
Current - Collector Cutoff (Max)：700µA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 4A, 4V
Power - Max：115 W
Frequency - Transition：2.5MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204 (TO-3)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJ2955G

MJ2955G

Single Bipolar Transistors Overview

The MJ2955G is a PNP silicon power transistor designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage of 60 Vdc, continuous collector current of 15 Adc, and total power dissipation of 115 W at 25°C case temperature. The device offers a DC current gain range of 20 to 70 at 4 Adc and a collector-emitter saturation voltage of 1.1 Vdc max at 4 Adc. It operates within a junction temperature range of -65°C to +200°C and utilizes the TO-204AA (TO-3) package.

Single Bipolar Transistors Feature Summary

Complementary silicon power transistor designed for general-purpose switching and amplifier applications
Excellent safe operating area with defined second breakdown limits
Lead-free package construction available

Single Bipolar Transistors Applications

General-purpose switching circuits
Amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'G' confirms lead-free package status as indicated in official documentation. Confirm the package style matches the required pinout configuration for your circuit design. Ensure thermal management strategies account for the specified derating characteristics above 25°C case temperature to maintain reliability within the stated operational limits.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor is required for complementary pairs with NPN devices like the 2N3055. Consider the TO-204AA package constraints for mounting and thermal interface requirements. Evaluate the DC current gain and saturation voltage specifications against the load requirements to ensure adequate drive capability and efficiency in the target application environment.

Single Bipolar Transistors Part Context

The MJ2955G belongs to the complementary pair family alongside the 2N3055 NPN transistor. Both are manufactured by onsemi using silicon technology. This series is categorized as a 15 Ampere, 60 Volt, 115 Watt power transistor line intended for robust industrial and commercial electronic designs requiring high current handling capabilities.