MJD210T4G

Single Bipolar Transistors Overview

The MJD210T4G is a PNP silicon power transistor in a DPAK (TO-252) surface-mount package. It features a maximum collector current of 5 A and a collector-emitter voltage of 25 Vdc. The device has a total power dissipation rating of 12.5 W at 25°C case temperature, with a thermal resistance junction-to-case of 10°C/W. It offers a high DC current gain ranging from 10 to 180 and a current-gain-bandwidth product of 65 MHz. Operating temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for low voltage, low-power, high-gain audio amplifier applications
• Annular construction provides low leakage characteristics
• Lead formed specifically for surface mount applications in plastic sleeves
• Epoxy material meets UL 94 V-0 flammability standards

Single Bipolar Transistors Applications

• Low voltage audio amplifiers
• Low-power switching circuits
• High-gain amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm shipping format and compliance status. Confirm that the component matches the required automotive or industrial site control requirements if applicable. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the Pb-free package.

Single Bipolar Transistors Selection Notes

Select this component when a PNP configuration is required for surface-mount designs. Consider the 25 V collector-emitter voltage limit and 5 A continuous current capability during circuit design. Evaluate the thermal resistance and power derating curves to ensure adequate heat dissipation for the intended operating environment.

Single Bipolar Transistors Part Context

This part belongs to the MJD200/MJD210 complementary plastic power transistor series manufactured by onsemi. It serves as the PNP counterpart to the NPN MJD200 device. Both transistors are designed for similar low-voltage, high-gain applications within the same family of surface-mount components.

Single Bipolar Transistors Replacement Considerations

MJD210RLG

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the MJD210T4G?

The maximum collector-base voltage (VCB) is 40 Vdc.

Is the MJD210T4G qualified for automotive applications?

Standard MJD210T4G units are not explicitly marked as automotive qualified; however, the NJVMJD210T4G variant is AEC-Q101 qualified and PPAP capable.

What is the typical output capacitance for the MJD210?

The output capacitance (Cob) is typically 120 pF when measured at VCB = 10 Vdc and f = 0.1 MHz.