Single Bipolar Transistors MJD2955-001 product image

MJD2955-001

$0.12
  • Description:TRANS PNP 60V 10A IPAK
  • Series:-

SKU:ff4497d4d17e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MJD2955-001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 10A IPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD2955-001

  • Description:TRANS PNP 60V 10A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
  • Power - Max:1.75 W
  • Frequency - Transition:2MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:IPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJD2955-001

MJD2955-001

Single Bipolar Transistors Overview

The MJD2955-001 is a PNP silicon power transistor manufactured by onsemi, belonging to the MJD2955 series. It features a single configuration housed in a TO-252-3 (DPAK) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 60V and a continuous collector current of 10A. The device exhibits a low collector-emitter saturation voltage of 1.1V and a minimum DC current gain (hFE) of 20. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1.75W.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • High continuous collector current capability
  • Suitable for audio, power linear, and switching applications

Single Bipolar Transistors Applications

  • Audio amplifier output stages
  • Power linear regulation circuits
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the TO-252-3 package matches the target PCB footprint. Confirm RoHS compliance status if required by assembly standards. Cross-reference the manufacturer part number with authorized distributor listings to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling in a compact surface-mount form factor. Consider the 60V voltage rating relative to the circuit's supply rails. Evaluate thermal management requirements given the 1.75W power dissipation limit. Compare hFE variations across operating temperatures to ensure adequate drive current availability.

Single Bipolar Transistors Part Context

This device is part of the MJD2955 family, which includes complementary NPN-PNP pairs. It utilizes planar technology with a base island layout. The MJD2955G variant shares similar electrical characteristics but may differ in packaging or ordering suffixes. It serves as a robust solution for medium-power discrete transistor applications.

Single Bipolar Transistors Replacement Considerations

MJD2955T4G is a documented alternative from onsemi. MJ2955 is a related low-voltage PNP power transistor.

MJD2955-001MJD2955-001
$0.12
Buy Now