MJE13009G

Single Bipolar Transistors Overview

The MJE13009G is an NPN silicon power transistor from the SWITCHMODE series, designed for high-voltage and high-speed power switching inductive circuits. It features a collector-emitter sustaining voltage of 400 V and a maximum continuous collector current of 12 A. The device offers a total power dissipation rating of 100 W and utilizes a TO-220AB package. Key electrical characteristics include a DC current gain (hFE) ranging from 8 to 20 at a collector current of 5 A, and a typical inductive switching fall time of 120 ns at 8 A with a case temperature of 100°C.

Single Bipolar Transistors Feature Summary

• Optimized for high-voltage, high-speed power switching applications where rapid fall times are critical.
• Features reverse bias safe operating area (SOA) capability when handling inductive loads at elevated temperatures.
• Includes comprehensive SOA and switching application information within technical documentation.

Single Bipolar Transistors Applications

• Switching Regulators
• Inverters
• Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits

Single Bipolar Transistors Procurement Notes

Verify that the suffix 'G' corresponds to the specific lead-free or packaging variant required by your design specifications. Confirm the package type matches the mechanical constraints of your PCB layout. Ensure the component meets all relevant environmental compliance standards applicable to your region before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust performance in 115 V and 220 V SWITCHMODE environments. The 400 V breakdown voltage provides sufficient headroom for standard mains-derived supplies. Consider the thermal management requirements associated with the 100 W dissipation rating and the TO-220AB package geometry during the initial circuit design phase.

Single Bipolar Transistors Part Context

This part belongs to the SWITCHMODE series of NPN silicon power transistors manufactured by onsemi. The series is engineered specifically for demanding power switching tasks. The MJE13009G shares functional similarities with other members of the MJE13009 family but may differ in specific manufacturing lot details or minor parameter tolerances defined by the manufacturer.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the MJE13009G are not available in the provided source material. Verify compatibility with generic equivalents such as MJE13009 only after confirming pinout and electrical specification alignment through official datasheets.