MJE340G

Single Bipolar Transistors Overview

The MJE340G is a plastic medium-power NPN silicon transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 300 Vdc, continuous collector current (IC) of 500 mAdc, and total power dissipation (PD) of 20 W at 25°C case temperature. The device operates within a junction temperature range of -65 to +150 °C. It utilizes a TO-225 package with a thermal resistance from junction to case of 6.25 °C/W. DC current gain (hFE) ranges from 30 to 240 at IC = 50 mAdc and VCE = 10 Vdc.

Single Bipolar Transistors Feature Summary

• Suitable for transformerless, line-operated equipment applications
• High power dissipation rating designed for high reliability
• Complementary to the MJE350 PNP transistor

Single Bipolar Transistors Applications

• Transformerless, line-operated equipment
• High-voltage general purpose applications
• Medium power linear applications
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'G' confirms Pb-Free status and RoHS compliance as documented in the official datasheet. Confirm the package style matches the required TO-225 configuration. Ensure application conditions remain within the specified maximum ratings for voltage, current, and power dissipation to maintain device reliability.

Single Bipolar Transistors Selection Notes

Select this component for high-voltage general-purpose tasks requiring medium power handling capabilities. Consider the complementary MJE350 for paired NPN-PNP circuit designs. Evaluate thermal management requirements against the 20 W dissipation limit and derating curves. Verify that the TO-225 package fits the intended mechanical constraints.

Single Bipolar Transistors Part Context

The MJE340G belongs to the MJE340 series of plastic medium-power NPN silicon transistors produced by onsemi. This series is engineered for robust performance in demanding environments. The device is part of a complementary pair with the MJE350, facilitating balanced design options for various electronic circuits requiring high voltage and moderate current specifications.

Single Bipolar Transistors Replacement Considerations

The MJE350 serves as the direct complementary replacement for PNP configurations. Cross-reference electrical parameters such as VCEO, IC, and PD when evaluating alternative manufacturers or pin-compatible substitutes to ensure functional equivalence in existing designs.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MJE340G?

The maximum collector-emitter voltage (VCEO) is 300 Vdc.

Is the MJE340G lead-free?

Yes, the MJE340G is Pb-Free and RoHS compliant.

What is the complementary transistor to the MJE340G?

The complementary PNP type is the MJE350.