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Product Detailed Parameters
- Description：IGBT MODULE 1200V 90A 350W E2
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E2
- Supplier Device Package：E2
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Power - Max：350 W
- Current - Collector Cutoff (Max)：800 µA
- Input Capacitance (Cies) @ Vce：3.8 nF @ 25 V
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Overview
The MKI50-12E7 is a six-pack IGBT module from IXYS, utilizing NPT3 technology. It integrates three high-speed IGBTs with fast reverse recovery HiPerFRED diodes in an industry-standard package with an isolated copper base plate. The module supports a collector-emitter voltage of 1200 V and a continuous collector current of 90 A at 25°C case temperature. Typical saturation voltage is 1.9 V, with short-circuit withstand capability up to 10 µs.
Feature Summary
- NPT3 IGBTs provide low saturation voltage and positive temperature coefficient for easy paralleling
- HiPerFRED diodes offer fast reverse recovery and low leakage current
- Industry standard package features solderable pins for PCB mounting and an isolated copper base plate
Applications
- Motor control including DC motor armature and excitation windings
- Synchronous motor excitation winding supply
- Transformer primary winding power supplies
- Welding equipment
- X-ray systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific E7 suffix matches project requirements as it denotes RoHS compliance. Check datasheet revision history for updates on electrical characteristics. Ensure thermal interface material selection aligns with the specified RthCH value for optimal heat dissipation performance.
Selection Notes
Select this module for applications requiring robust short-circuit SOA capability and square RBSOA. Evaluate thermal resistance values against heatsink design constraints. Consider the 10 µs short-circuit time when designing protection circuits. Verify gate resistor values to optimize switching energy losses between turn-on and turn-off phases.
Part Context
This component belongs to the MWI/MKI 50-12 series of six-pack IGBT modules. It shares the same internal structure and electrical ratings as the MWI50-12E7 but differs in pin configuration suitable for bridge rectifier or H-bridge topologies rather than AC drive configurations.
Replacement Considerations
The MWI50-12E7 serves as a functional equivalent with identical electrical parameters and pinout compatibility. Both parts utilize the same NPT3 IGBT and HiPerFRED diode technologies within the same physical package dimensions.
