SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMBF4416A is an N-channel RF amplifier JFET manufactured by onsemi. It operates with a drain-source voltage of 15 V and zero-gate voltage drain current ranging from 5 mA to 15 mA. The device features a noise figure of 4.0 dB at 400 MHz, forward transfer conductance between 4500 and 7500 μmhos, and input capacitance of 4.0 pF. Absolute maximum ratings include a drain-gate voltage of 35 V, gate-source voltage of -35 V, and total device dissipation of 225 mW. It is housed in a SOT-23 package.
Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component meets RoHS3 compliance standards and check for any specific marking layout updates resulting from Fairchild Semiconductor integration. Ensure sourcing through authorized distributors to avoid counterfeit parts.
Select this component when designing N-channel RF amplifier circuits requiring low noise performance at frequencies around 400 MHz. Verify that the required drain current falls within the 5 mA to 15 mA range and that the operating voltage does not exceed the 15 V rating. Consider the SOT-23 package constraints for PCB layout.
The MMBF4416A is part of the MMBF4416 series of N-channel RF amplifiers. Originally produced by Fairchild Semiconductor, it is now managed under onsemi following corporate integration. The device maintains its original specifications and functionality while adhering to updated ordering nomenclature standards.
Consult the official onsemi website for updated ordering information and potential cross-references. Verify compatibility with existing circuit designs before substituting with other JFETs or RF amplifiers.
The absolute maximum drain-gate voltage (VDG) is 35 V.
The noise figure is 4.0 dB when measured at VDS = 15 V, VGS = 0, ID = 5 mA, Rg = 1 kΩ, and f = 400 MHz.
The device is available in a SOT-23 3L package.