MMBF5485_NB50012

Overview

The onsemi MMBF5485 is an N-Channel RF amplifier designed for electronic switching applications, such as low on-resistance analog switches. It utilizes the Process 50 technology and is housed in a SOT-23 package where source and drain terminals are interchangeable. Key electrical characteristics include a gate-source breakdown voltage of -25V at IG = -1.0 μA and VDS = 0. The device exhibits a zero-gate voltage drain current (IDSS) ranging from 8.0 mA to 10.0 mA under conditions of VDS = 15V and VGS = 0. Additionally, the gate-source cutoff voltage (VGS(off)) is specified between -0.5V and -4.0V when VDS = 15V and ID = 10 nA.

Feature Summary

• Designed specifically for electronic switching applications including low on-resistance analog switches
• Utilizes Process 50 technology for reliable performance
• Features an SOT-23 package with interchangeable source and drain terminals

Applications

• Electronic switching systems
• Low on-resistance analog switch implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact specifications. Confirm RoHS compliance status through manufacturer material composition declarations. Ensure thermal management aligns with the junction-to-ambient resistance rating of 556 °C/W on standard FR-4 PCBs. Validate that operating voltages remain within absolute maximum ratings to prevent device damage.

Selection Notes

Select this component based on required gate-source cutoff voltage ranges and zero-gate voltage drain current specifications. Consider the SOT-23 package constraints and the interchangeability of source and drain pins during layout. Evaluate thermal dissipation requirements relative to the specified junction-to-ambient thermal resistance. Ensure compatibility with Process 50 technology integration within the target circuit design.

Part Context

This part belongs to the MMBF5484/5485/5486 family of N-Channel RF amplifiers from onsemi. These devices share similar packaging and core technology but differ in specific electrical parameters like cutoff voltage and drain current. They are distinct from general-purpose discrete transistors or JFETs listed in broader catalogs, serving specialized roles in RF and analog switching contexts.

Replacement Considerations

MMBF5484 and MMBF5486 are related parts within the same family. Substitution requires verifying that the alternative's gate-source cutoff voltage and zero-gate voltage drain current ranges meet the specific circuit requirements, as these parameters vary across the series.