MMBFJ175LT1

Description：SS P-CHAN 25V SOT23
Series：*

SKU:7fb037906135 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：SS P-CHAN 25V SOT23
Series：*
Mfr：onsemi
Package：Cut Tape (CT)
FET Type：-
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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MMBFJ175LT1

Overview

The MMBFJ175LT1G is a single P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a gate-source breakdown voltage of 30 V and supports a drain-source current range of 7 mA to 60 mA at zero gate-source voltage.

Feature Summary

Single P-Channel JFET configuration for discrete signal processing
Silicon-based construction within a compact SOT-23-3 surface-mount package

Applications

Low-noise amplifier circuits
Impedance conversion stages
Analog switch applications
Chopper circuit implementations

Procurement Notes

Verify the complete part number includes the 'G' suffix, as official documentation lists this component as MMBFJ175LT1G. Confirm RoHS compliance status through the manufacturer's specific datasheet before procurement. Ensure the ordering quantity aligns with available packaging formats such as cut tape or reel options provided by distributors.

Selection Notes

Select this component when a P-Channel JFET with a 30 V gate-source rating is required. The specified drain current range suits low-power analog applications. Verify that the SOT-23-3 package dimensions fit the target PCB layout constraints. Consider thermal dissipation requirements relative to the package type during design integration.

Part Context

This component belongs to the MMBFJ175L series of JFETs from onsemi. It is categorized under discrete transistors and specifically falls within the P-Channel JFET segment. The device is designed for general-purpose analog switching and amplification tasks requiring low noise characteristics.