MMBFJ211

Overview

The MMBFJ211 is an N-channel RF amplifier JFET manufactured by onsemi, housed in a SOT-23 surface-mount package. It serves as a low-noise device for sensitive receiver applications where standard processes are insufficient. Key electrical parameters include a drain-gate voltage of 25 V and a gate-source breakdown voltage of -25 V. The zero-gate voltage drain current ranges from 7.0 to 20 mA at 15 V. Common source forward transconductance is specified between 7000 and 12000 μmhos at 1.0 kHz. Total device dissipation is rated at 225 mW with a thermal resistance junction-to-ambient of 556 °C/W.

Feature Summary

• Designed for HF/VHF mixer and amplifier applications requiring high gain and low noise.
• Sourced from process 90 to ensure performance levels exceeding standard process 50 capabilities.
• Utilizes a compact SOT-23 three-lead surface-mount package for efficient board space utilization.

Applications

• High-frequency (HF) and very high frequency (VHF) mixer circuits
• RF amplifier stages in sensitive receiver front-ends
• Low-noise signal processing applications

Procurement Notes

Verify the specific ordering suffix when purchasing, as packing methods vary. The MMBFJ211 variant typically utilizes tape and reel packaging. Confirm that the component meets RoHS compliance standards and check for any relevant product change notices or material declarations prior to finalizing procurement orders for production integration.

Selection Notes

Select the MMBFJ211 when circuit designs demand superior gain and lower noise figures than those provided by standard JFET processes. Ensure the application operates within the recommended limits for total device dissipation and thermal resistance. Verify that the SOT-23 package dimensions align with the PCB land pattern recommendations provided in the datasheet physical dimensions section.

Part Context

The MMBFJ211 belongs to the J211 family of N-channel RF amplifiers produced by onsemi. While the through-hole J211 variant exists in a TO-92 package, the MMBFJ211 specifically denotes the surface-mount version in a SOT-23 case. Both variants share identical electrical characteristics but differ in physical packaging and thermal dissipation ratings due to their distinct form factors.

Replacement Considerations

Direct substitutes include the J211 for through-hole implementations. Other compatible N-channel RF JFETs listed in similar documentation include the MMBFJ212, BF244A, MPF102, 2N3819, J304, J309, MMBFJ305, 2N5484, and MMBF102. Verify pinout compatibility and electrical parameter overlaps before substitution.

FAQ

Are the source and drain terminals interchangeable on the MMBFJ211?

Yes, the datasheet notes that the source and drain leads are interchangeable for this device.

What is the maximum operating junction temperature for the MMBFJ211?

The absolute maximum rating for the operating and storage junction temperature range is -55 to 150 °C.

How does the MMBFJ211 differ from the J211 regarding packaging?

The MMBFJ211 is packaged in a SOT-23 surface-mount format with tape and reel packing, whereas the J211 uses a TO-92 through-hole package with ammo packing.