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The MMBFJ304 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. The device supports a continuous drain current of 10 mA and a total power dissipation of 310 mW at 25°C ambient temperature. Key electrical characteristics include a minimum zero-gate-voltage drain current of 0.1 mA and a maximum of 5.0 mA, with a typical value of 1.0 mA. The input capacitance is specified as a maximum of 6 pF. This component is housed in the SOT-23 surface-mount package.
Verify the specific ordering suffix to confirm the tape-and-reel quantity and RoHS compliance status. Ensure the procurement channel provides valid traceability documentation. Cross-reference the manufacturer's latest datasheet for any updates to mechanical dimensions or thermal characteristics before finalizing purchase orders.
Select this component when an N-channel JFET with low noise and moderate current handling is required. Compare the zero-gate-voltage drain current range against circuit biasing requirements. Verify that the SOT-23 package footprint matches the PCB layout constraints and that the thermal resistance meets the system's heat dissipation needs.
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the JFET category. These devices are engineered for linear operation regions, distinguishing them from switching MOSFETs. The product line targets precision analog circuits where high input impedance and low distortion are critical performance factors.
Substitute parts must match the N-channel polarity, SOT-23 package, and electrical limits. Verify equivalent parameters such as IDSS range, BV(DSS), and CIN. Confirm that alternative manufacturers provide similar noise specifications and thermal performance ratings for direct pin-to-pin compatibility.