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Product Detailed Parameters
- Description：RF MOSFET JFET 10V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：JFET
- Frequency：-
- Gain：12dB
- Voltage - Test：10 V
- Current Rating (Amps)：60mA
- Noise Figure：-
- Current - Test：10 mA
- Power - Output：-
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Configuration：N-Channel
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Overview
The MMBFJ310LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package and utilizes silicon technology. The device features a drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. The zero-gate-voltage drain current ranges from 24 mA to 60 mA, with a typical test current of 10 mA at a drain-source voltage of 10 V. This single-configured transistor is designed for RF applications.
Feature Summary
- N-channel JFET configuration optimized for radio frequency signal processing
- Surface-mount SOT-23-3 packaging for compact circuit integration
- Silicon-based construction ensuring stable electrical performance
Applications
- RF amplifier circuits
- Low-noise signal amplification stages
- Variable gain control applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the datasheet before finalizing procurement plans. Ensure the component matches the required pinout and thermal characteristics for the target PCB layout.
Selection Notes
Select this component when an N-channel JFET with a 25 V breakdown rating is required in a small surface-mount footprint. Verify that the 24 mA to 60 mA drain current range aligns with the circuit's biasing requirements. Consider the SOT-23-3 package dimensions for space-constrained designs requiring RF performance.
Part Context
This part belongs to the MMBFJ310L series of RF JFETs produced by onsemi. It serves as a discrete semiconductor solution for high-frequency analog applications. The device is distinct from MOSFETs due to its depletion-mode operation and high input impedance characteristics suitable for sensitive RF front-end stages.
Replacement Considerations
Direct substitutes include the MMBFJ310LT3G variant from the same manufacturer family. Cross-reference pinouts and electrical parameters carefully when considering alternative brands.
