MMBFJ310LT3G

MMBFJ310LT3G

$0.48
  • Description:RF MOSFET JFET 10V SOT23-3
  • Series:-

SKU:1cb1f4b4ac6c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET JFET 10V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:JFET
  • Frequency:-
  • Gain:12dB
  • Voltage - Test:10 V
  • Current Rating (Amps):60mA
  • Noise Figure:-
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:25 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Configuration:N-Channel

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MMBFJ310LT3G

Overview

The MMBFJ310LT3G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. At zero gate-source voltage, the drain-source current ranges from 24 mA to 60 mA. The component operates with a test voltage of 10 V and provides a gain of 12 dB at a test current of 10 mA. It is compliant with RoHS standards and has a moisture sensitivity level of 1.

Feature Summary

  • Single N-channel JFET configuration for discrete signal processing
  • Silicon-based construction optimized for RF applications
  • Surface-mount SOT-23-3 packaging for compact circuit integration

Applications

  • RF amplifier stages
  • Low-noise signal conditioning circuits
  • High-impedance input buffers

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard factory pack sizes or cut-tape availability requirements. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

Selection Notes

Select this component when a single N-channel JFET with a 25 V breakdown rating is required in a small surface-mount footprint. Ensure the application demands a drain-source current range between 24 mA and 60 mA at zero bias. Verify that the SOT-23-3 package dimensions fit the PCB layout constraints and that the 12 dB gain specification meets the circuit design requirements.

Part Context

This part belongs to the MMBFJ310L series of JFETs produced by onsemi. It is designed for general-purpose and RF applications requiring high input impedance and low noise characteristics. The component is distinct from MOSFETs due to its depletion-mode operation and junction-gate structure, making it suitable for specific analog signal handling tasks.

Replacement Considerations

Publicly confirmed direct substitutes include MMBF5457, MMBF5484, and MMBF5485 from onsemi. Verify pinout compatibility and electrical parameter overlaps before substituting.

MMBFJ310LT3GMMBFJ310LT3G
$0.48
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