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Product Detailed Parameters
- Description：TRANS NPN 150V 0.6A SOT-23
- Series：-
- Mfr：HY Electronic (Cayman) Limited
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The MMBT5401 is a small signal PNP transistor manufactured by HY Electronic (Cayman) Limited. It features a collector current of -600 mA and power dissipation of 300 mW. Key electrical ratings include a collector-base breakdown voltage of -160 V, collector-emitter breakdown voltage of -150 V, and emitter-base breakdown voltage of -5 V. The device operates with a transition frequency of 100 MHz and has a thermal resistance from junction to ambient of 416 °C/W. Maximum ratings specify a junction temperature of 150 °C and a storage temperature range of -55 to +150 °C.
Feature Summary
- High stability and high reliability design
- Halogen-free construction using green molding compound
- UL flammability classification rating 94V-0
Applications
- General-purpose switching applications
- Small signal amplification circuits
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the SOT-23 package dimensions and pin assignments match the target PCB layout requirements. Ensure that thermal management strategies account for the specified junction-to-ambient thermal resistance under expected operating conditions.
Selection Notes
Select this component when a PNP transistor with a -150 V collector-emitter voltage rating is required. Consider the -600 mA continuous collector current capability for load handling. Evaluate the 300 mW power dissipation limit relative to the ambient temperature and available heat sinking in the final assembly design.
Part Context
This component belongs to the MMBT series of small signal transistors produced by HY Electronic (Cayman) Limited. It utilizes a surface-mount SOT-23 package suitable for automated assembly processes. The device is designed for general electronic applications requiring reliable PNP switching or amplification characteristics within standard commercial temperature ranges.
Replacement Considerations
Cross-reference with other manufacturers' MMBT5401 equivalents to verify pinout compatibility and electrical parameter alignment. Ensure substitute components meet the same -160 V VCBO and -150 V VCEO breakdown voltage specifications.
FAQ
What is the maximum collector-base breakdown voltage?
The maximum collector-base breakdown voltage (V(BR)CBO) is -160 V.
What is the transition frequency of the device?
The transition frequency (fT) is 100 MHz.
Is the device halogen-free?
Yes, the product specification confirms the device is halogen-free.
