MMBT7002DW

$0.19

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-

SKU:2f35e4801fd1 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

MMBT7002DW is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET 2N-CH 60V 0.115A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMBT7002DW

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MMBT7002DW

MMBT7002DW

FET, MOSFET Arrays Overview

The MMBT7002DW is a dual N-channel enhancement mode field-effect transistor manufactured by Diotec Semiconductor in an SOT-363 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 60 V and a continuous drain current (ID) of 115 mA at 25°C. The maximum drain-source on-state resistance (RDS(on)) is 7.5 Ω at VGS = 5 V and 10 V. Gate-source leakage current is limited to 100 nA, while gate threshold voltage ranges from 1 V to 2.5 V. Total power dissipation is rated at 200 mW, with a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual FET configuration integrating two transistors within a single compact package
Fast switching times suitable for high-speed signal processing applications
Compliant with RoHS directives without exemptions and adheres to REACH regulations

FET, MOSFET Arrays Applications

Signal processing circuits
Logic level converters
Driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm package marking codes and datasheet revisions directly with Diotec Semiconductor before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in space-constrained layouts. Ensure the required drain current does not exceed 115 mA and that the operating voltage remains below 60 V. Verify thermal management capabilities, as total power dissipation is limited to 200 mW under standard mounting conditions.

FET, MOSFET Arrays Part Context

This part belongs to the MMBT-MOSFET series produced by Diotec Semiconductor. It serves as a dual-transistor alternative to single-channel devices like the 2N7002, offering integrated functionality in the SOT-363 footprint. The device is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in SOT-363 packages such as the MMBT7002KW-AQ or equivalent parts from other manufacturers. Verify pinout compatibility and electrical parameters, specifically RDS(on) and BVDSS, before implementation.