Single Bipolar Transistors MMBTA63-7-F product image

MMBTA63-7-F

$0.17
  • Description:TRANS PNP DARL 30V 0.5A SOT-23-3
  • Series:-

SKU:9e65845ceb90 Category: Brand:

  
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MMBTA63-7-F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP DARL 30V 0.5A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMBTA63-7-F

  • Description:TRANS PNP DARL 30V 0.5A SOT-23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:125MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for MMBTA63-7-F

MMBTA63-7-F

Single Bipolar Transistors Overview

The MMBTA63-7-F is a PNP Darlington transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features epitaxial planar die construction and is designed for low power amplification and switching applications. The device operates with a collector-emitter voltage of -30 V and a continuous collector current of -500 mA. DC current gain ranges from 5,000 to 10,000 at -10 mA, extending to 10,000–20,000 at -100 mA. Power dissipation is rated at 300 mW, with a junction-to-ambient thermal resistance of 417 °C/W. Operating temperature spans -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High current gain suitable for low power amplification and switching
  • Epitaxial planar die construction for high reliability
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free green device

Single Bipolar Transistors Applications

  • Low power amplification circuits
  • General purpose switching applications
  • Complementary pairing with NPN types like MMBTA13/MMBTA14

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications. Ensure the selected part matches the intended application requirements regarding voltage and current ratings before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain PNP Darlington transistor is required in a compact SOT23 package. Consider its suitability for low power amplification and switching tasks. Verify compatibility with complementary NPN devices if used in push-pull configurations. Check thermal management needs against the specified power dissipation limits.

Single Bipolar Transistors Part Context

This component belongs to the MMBTA63 series of PNP Darlington transistors produced by Diodes Incorporated. It is part of a family offering high current gain in small surface-mount packages. The series includes complementary NPN variants for balanced circuit design. The product is qualified to JEDEC standards for high reliability.

Single Bipolar Transistors Replacement Considerations

MMBTA64-7-F

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MMBTA63-7-F?

The maximum collector-emitter voltage (VCEO) is -30 V.

Is the MMBTA63-7-F RoHS compliant?

Yes, the device is totally lead-free and fully RoHS compliant.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 5,000 to 10,000 at -10 mA collector current.

MMBTA63-7-FMMBTA63-7-F
$0.17
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