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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：310mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The MMBTH10Q-7-F is an NPN VHF/UHF transistor manufactured by Diodes Incorporated in a SOT23 package. It features a collector-emitter breakdown voltage (BVCEO) of 25V and a collector-base breakdown voltage (BVCBO) of 30V. The device supports a continuous collector current of 50mA with a power dissipation rating of 350mW. Electrical characteristics include a DC current gain (hFE) minimum of 60 at IC=4mA, a saturation voltage below 500mV, and a current gain-bandwidth product (fT) of 650MHz. Operating temperature ranges from -65°C to +150°C.
Feature Summary
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
- Optimized for high-frequency performance with a 650MHz gain-bandwidth product.
- Low saturation voltage ensures efficient switching operations.
- Manufactured using lead-free, halogen-free, and antimony-free green materials.
Applications
- VHF/UHF amplifiers
- High output VHF oscillators
- RF amplifiers
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for the assembly process. Ensure the supplier provides traceability documentation consistent with IATF 16949 certified manufacturing facilities.
Selection Notes
Select this component when designing circuits requiring high-frequency operation up to UHF bands with moderate current handling capabilities. The 25V breakdown voltage suits low-voltage signal processing applications. Verify thermal management requirements against the 403 °C/W junction-to-ambient resistance for standard PCB layouts.
Part Context
This part belongs to the MMBTH10Q series of small-signal transistors designed specifically for VHF and UHF frequency ranges. It serves as a specialized alternative to general-purpose BJTs where higher transition frequencies are necessary. The SOT23 form factor allows for compact surface-mount integration in portable electronic devices.
Replacement Considerations
Direct substitutes must match the 25V BVCEO, 50mA IC, and 650MHz fT specifications within the SOT23 package. Cross-referencing requires verifying identical pinout configurations and thermal resistance values to ensure circuit compatibility without redesign.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCEO) is 25V.
Is this component suitable for automotive use?
Yes, the MMBTH10Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the typical current gain-bandwidth product?
The current gain-bandwidth product (fT) is specified at 650 MHz.
