RF Diode MMBV3401LT1 product image

MMBV3401LT1

$0.10
  • Description:RF DIODE PIN 35V 200MW SOT-23-3
  • Series:-

SKU:f8d32d974399 Category: Brand:

  
  • Quantity
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MMBV3401LT1 is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is RF DIODE PIN 35V 200MW SOT-23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMBV3401LT1

  • Description:RF DIODE PIN 35V 200MW SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):35V
  • Current - Max:-
  • Capacitance @ Vr, F:1pF @ 20V, 1MHz
  • Resistance @ If, F:700mOhm @ 10mA, 100MHz
  • Power Dissipation (Max):200 mW
  • Operating Temperature:125°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMBV3401LT1

MMBV3401LT1

RF Diode Overview

The MMBV3401LT1 is a silicon PIN diode designed primarily for VHF band switching applications and general-purpose switching circuits. It features a rugged PIN structure coupled with wirebond construction to ensure optimum reliability. The device is supplied in a surface-mount SOT-23 package and is compliant with Pb-free, Halogen-free/BFR-free, and RoHS standards. Key electrical characteristics include a reverse breakdown voltage of 35 Vdc, a maximum diode capacitance of 1.0 pF at 20 Vdc reverse bias, and a typical series resistance of 0.7 ohms at 10 mA forward current and 100 MHz frequency.

RF Diode Feature Summary

  • Rugged PIN structure combined with wirebond construction for enhanced reliability
  • Low capacitance design suitable for high-frequency switching
  • Very low series resistance at 100 MHz operation

RF Diode Applications

  • VHF band switching applications
  • General-purpose switching circuits

RF Diode Procurement Notes

Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-free package configuration. Confirm tape and reel specifications, including part orientation and tape sizes, by referencing the manufacturer's Tape and Reel Packaging Specifications brochure (BRD8011/D) prior to procurement to ensure compatibility with assembly equipment.

RF Diode Selection Notes

Select this component for designs requiring low capacitance and low series resistance in the VHF range. Ensure the operating junction temperature remains within the +125 °C limit and that power dissipation does not exceed 200 mW at 25°C ambient temperature. Derate power dissipation by 2.0 mW/°C for temperatures above 25°C to maintain device integrity.

RF Diode Part Context

This component belongs to the MMBV3401 series of silicon PIN diodes manufactured by onsemi. It is housed in an SOT-23 (TO-236AB) surface-mount package, designated as CASE 318-08. The device utilizes Style 8 pin configuration, where Pin 1 is the Anode, Pin 2 is No Connection, and Pin 3 is the Cathode.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, verify that the replacement matches the SOT-23 package dimensions, maintains similar reverse breakdown voltage and capacitance specifications, and supports the required VHF switching frequencies.

MMBV3401LT1MMBV3401LT1
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