FET, MOSFET Arrays MMFTN6190KDW product image

MMFTN6190KDW

$0.10
  • Description:MOSFET 2N-CH 30V 1A SOT363
  • Series:-

SKU:9678b939a325 Category: Brand:

  
  • Quantity
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MMFTN6190KDW is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET 2N-CH 30V 1A SOT363. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMFTN6190KDW

  • Description:MOSFET 2N-CH 30V 1A SOT363
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1A (Ta)
  • Rds On (Max) @ Id, Vgs:280mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:87pF @ 20V
  • Power - Max:320mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MMFTN6190KDW

MMFTN6190KDW

FET, MOSFET Arrays Overview

The MMFTN6190KDW is a dual N-channel enhancement mode field-effect transistor manufactured by Diotec Semiconductor. It is housed in an SOT-363 surface-mount package and designed for commercial and industrial applications. The device features a drain-source voltage rating of 30 V, a continuous drain current of 1 A at 25°C ambient temperature, and a maximum power dissipation of 400 mW on a PCB with large copper pads. The typical drain-source on-state resistance is 185 mΩ at VGS = 4.5 V and ID = 290 mA. It operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual MOSFET configuration integrating two independent N-channel enhancement mode transistors in a single compact package.
  • ESD protected gate structure capable of sustaining high electrostatic discharge voltages up to ±2 kV.
  • Low threshold voltage design enabling efficient switching performance at low drive levels.
  • Fast switching times characterized by short turn-on delay and rise/fall durations.

FET, MOSFET Arrays Applications

  • Power management circuits
  • Motor control systems
  • Driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing components. The base model MMFTN6190KDW represents the standard commercial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the delivered part matches the required automotive or commercial specification before integration into the final assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in a minimal footprint. Ensure the thermal design accommodates the specified power dissipation limits based on the available copper pad area. Verify that the gate drive voltage meets the requirements for the desired on-state resistance level. Consider the ESD protection capabilities if the application involves sensitive input interfaces.

FET, MOSFET Arrays Part Context

This component belongs to the MMFTN series of dual MOSFETs from Diotec Semiconductor. It utilizes the SOT-363 (SC-88) package format, which is widely used for space-constrained surface mount applications. The marking code Z69N identifies the device on the package body.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the manufacturer datasheet. Engineers should evaluate cross-compatibility based on pinout alignment, electrical ratings, and package dimensions when considering alternative sources.

MMFTN6190KDWMMFTN6190KDW
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