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MMFTP6312D is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET SOT26 P -20V 0.115OHM. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MMFTP6312D
- Description：MOSFET SOT26 P -20V 0.115OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：2.3A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MMFTP6312D
FET, MOSFET Arrays Overview
The MMFTP6312D is a dual P-Channel MOSFET manufactured by Diotec Semiconductor, housed in an SOT-26 (SOT-457) surface-mount package. It features a drain-source voltage rating of -20 V and a continuous drain current of -2.3 A at 25°C. The device exhibits a maximum on-state resistance of 115 mΩ at VGS = -4.5 V and ID = -2.3 A. Total power dissipation reaches 0.96 W when mounted on a PCB with an 80 mm² copper pad at the drain terminal. The junction temperature range spans from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual configuration providing two independent P-channel MOSFETs within a single compact footprint for space-constrained designs.
- Fast switching times optimized for efficient signal processing and driver stage applications.
- Compliant with RoHS directives without exemptions and adheres to REACH regulations regarding conflict minerals.
FET, MOSFET Arrays Applications
- Signal processing circuits
- Battery management systems
- Driver stages
- Logic level converters
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix to confirm compliance requirements. Standard versions are designated for commercial and industrial use. Suffixes such as -Q or -AQ indicate AEC-Q101 qualification status. Confirm that the requested variant matches the intended reliability grade before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this component for low-voltage logic interfacing where dual channel isolation is required. Ensure thermal design accommodates the specified RthJA of less than 130 K/W for ambient cooling. Verify gate drive voltages remain within the ±8 V limit to prevent breakdown while maintaining adequate threshold control for the 115 mΩ on-resistance specification.
FET, MOSFET Arrays Part Context
This component belongs to Diotec's portfolio of small-signal and logic-level MOSFETs designed for general-purpose switching. It utilizes silicon technology packaged in the industry-standard SOT-26 outline. The device serves as a standard-grade solution for commercial electronics, distinct from automotive-specific variants which carry additional qualification markings.
FET, MOSFET Arrays Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, match the SOT-26 package dimensions, -20 V VDS rating, and dual P-Channel configuration. Verify that replacement devices offer comparable RDS(on) values and thermal resistance characteristics to ensure circuit performance parity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
