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Product Detailed Parameters
- Description：IGBT PT 600V 223A 24-SMPD
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：223 A
- Current - Collector Pulsed (Icm)：1000 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 100A
- Power - Max：625 W
- Switching Energy：2.85mJ (on), 2.9mJ (off)
- Input Type：Standard
- Gate Charge：315 nC
- Td (on/off) @ 25°C：48ns/160ns
- Test Condition：360V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：24-PowerSMD, 21 Leads
- Supplier Device Package：24-SMPD
- Grade：-
- Qualification：-
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Overview
The MMIX1X200N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in an SMDP-21 surface-mount package designed for high-power applications. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 175 A at 25°C. Its collector-emitter saturation voltage is specified at 1.7 V, with a maximum power dissipation of 520 W. The component operates within a temperature range of -55°C to +150°C and has a gate-emitter voltage rating of ±20 V.
Feature Summary
- Surface-mount construction in an SMDP-21 package for automated assembly
- High current handling capability with 175 A continuous collector current
- Robust thermal performance supporting up to 520 W power dissipation
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix B3 against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure ordering quantities align with standard tube packaging configurations provided by the supplier.
Selection Notes
Select this component for designs requiring surface-mount IGBTs with 600V blocking capability. Compare the 1.7 V saturation voltage against system efficiency targets. Verify that the SMDP-21 footprint fits the PCB layout constraints and that thermal management solutions can handle the 520 W dissipation rating under worst-case operating conditions.
Part Context
This part belongs to the IXYS IGBT portfolio, specifically utilizing silicon planar technology. It serves as a discrete power switching element within the broader category of semiconductor power devices. The SMDP-21 package distinguishes it from through-hole alternatives like TO-247 or screw-mount modules, offering a compact solution for modern surface-mount manufacturing processes.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must maintain identical voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the printed circuit board.
