MMRF1004GNR1

$19.13

Description：RF MOSFET LDMOS 28V TO270-2
Series：-

SKU:a1e0b1fcf2cd Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V TO270-2
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.17GHz
Gain：15.5dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：130 mA
Power - Output：10W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270BA
Supplier Device Package：TO-270-2 GULL
Configuration：-

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MMRF1004GNR1

Overview

The MMRF1004GNR1 is an N-channel enhancement-mode lateral MOSFET designed for Class A or AB general-purpose applications from 1600 to 2200 MHz. It delivers 10 W PEP at 2170 MHz with 15.5 dB gain and 36% efficiency. Qualified up to 32 VDD, it handles 5:1 VSWR at 28 VDC, 2000 MHz, 10 W CW. Features include integrated ESD protection, internal matching, and a 225°C capable plastic package.

Feature Summary

Internally matched for ease of use
Qualified up to a maximum of 32 VDD operation
Integrated ESD protection
225°C capable plastic package

Applications

Analog modulation amplifier applications
Digital modulation amplifier applications
Multipurpose amplifier applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R1 suffix indicates tape and reel configuration with 500 units on a 24 mm wide, 13-inch reel. Ensure compatibility with moisture sensitivity level 3 requirements during assembly processes.

Selection Notes

Select this component for broadband RF power amplification in the 1600-2200 MHz range. It supports both analog and digital modulation schemes. The device offers high ruggedness with 5:1 VSWR capability and operates reliably up to 32 V drain voltage, suitable for demanding communication environments.

Part Context

This part belongs to the MMRF1004 series of RF Power Field Effect Transistors manufactured by NXP USA Inc. (formerly Freescale Semiconductor). It is categorized as an N-channel enhancement-mode lateral MOSFET specifically engineered for high-frequency RF power applications requiring robust performance and thermal stability.