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The MMRF1007HR5 is a dual-channel lateral DMOS (LDMOS) RF power transistor manufactured by NXP Semiconductors. Designed for high-power applications, it operates within the frequency range of 965 MHz to 1215 MHz. The device delivers an output power of 1000 W with a typical gain of 20 dB when biased at 50 V. It features a drain-source breakdown voltage of 110 V and supports a maximum operating temperature of +150°C. The component utilizes the NI-1230S-4 package, which facilitates screw mounting for efficient thermal management in demanding RF environments.
Verify the specific suffix against official documentation, as variations may exist between HR5 and HSR5 designations regarding packaging or testing standards. Confirm current availability status, as this component may be subject to obsolescence notices. Ensure that sourcing channels provide valid traceability and authenticity certificates to mitigate risks associated with counterfeit semiconductor components.
Select this component for designs requiring substantial RF power output in the VHF/UHF bands. Evaluate the NI-1230S-4 package compatibility with existing heatsink infrastructure and mechanical constraints. Consider the 50 V bias requirement and ensure the power supply system can sustain the necessary current levels for 1 kW output without exceeding thermal limits under continuous wave conditions.
This part belongs to the MMRF1007 series of RF power transistors from NXP Semiconductors. The series is engineered for robust performance in high-power RF amplification tasks. The MMRF1007HR5 specifically denotes the reel-packaged variant of this dual-channel LDMOS device, maintaining the electrical characteristics defined by the base MMRF1007 model while differing in shipping configuration.
Consult official substitution guides for direct equivalents. Verify pinout compatibility and thermal resistance values before integrating alternative components.