MMRF1007HSR5

Overview

The MMRF1007HSR5 is an N-Channel enhancement-mode lateral MOSFET designed for pulse applications operating between 900 MHz and 1215 MHz. It delivers a peak output power of 1000 W at 1030 MHz with a drain efficiency of 56% under standard test conditions (VDD = 50 Vdc, IDQ = 150 mA, 128 µsec pulse width, 10% duty cycle). The device features a NI-1230S-4S package, supports up to 50 Vdc operation, and includes integrated ESD protection.

Feature Summary

• Internally matched for ease of use
• Designed for push-pull operation
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• Defense pulse applications
• Commercial pulse applications
• IFF systems
• DME systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R5 suffix indicates tape and reel packaging with 50 units per 56 mm tape on a 13-inch reel. Confirm that the component meets all required environmental compliance standards before integration into final designs.

Selection Notes

Select this component for high-power pulse applications requiring broadband performance from 900 MHz to 1215 MHz. Ensure the design accommodates the NI-1230S-4S package and screw mount installation style. Verify thermal management capabilities to handle the specified junction temperature limits during continuous or burst operation modes.

Part Context

This part belongs to the MMRF1007 series of RF power transistors manufactured by NXP Semiconductors. It is characterized using series equivalent large-signal impedance parameters. The device is suitable for both defense and commercial sectors, offering robust performance in demanding pulse environments.

Replacement Considerations

MMRF1007HR5

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is +110 Vdc.

Is the device capable of handling high VSWR?

Yes, the device is capable of handling 5:1 VSWR at 50 Vdc, 1030 MHz, and 1000 W peak power.

What is the typical power gain at 1030 MHz?

The typical power gain at 1030 MHz is 20 dB under standard test conditions.