MMRF1009HR5

Overview

The MMRF1009HR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the 960 MHz to 1215 MHz frequency range and delivers a continuous wave output power of 500 W at a drain voltage of 50 V. The device utilizes silicon technology and is supplied in a reel package configuration.

Feature Summary

• Pulse lateral N-channel RF power MOSFET architecture
• Silicon-based semiconductor technology
• High-power RF performance capability

Applications

• RF power amplification in broadcast transmitters
• Industrial, Scientific, and Medical (ISM) equipment
• Radio navigation systems

Procurement Notes

Verify the specific suffix HR5 against the official NXP datasheet to confirm the reel packaging variant. Confirm current lifecycle status as sources indicate potential end-of-life or obsolescence phases. Ensure compatibility with existing thermal management designs for high-power dissipation requirements before procurement.

Selection Notes

Select this component for applications requiring high output power in the L-band frequency range. Evaluate thermal resistance and heat sink requirements due to the 500 W power rating. Compare electrical characteristics with alternative NXP MRF series devices if supply constraints exist.

Part Context

This part belongs to the NXP MMRF series of lateral DMOS RF power transistors designed for demanding RF applications. The series offers robust performance for broadband and narrowband amplifier designs operating in the HF, VHF, and UHF bands.