MMRF1012NR1

$2.33

Description：RF MOSFET LDMOS 50V TO270-2
Series：-

SKU:f51704848d3d Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V TO270-2
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Bulk
Technology：LDMOS
Frequency：220MHz
Gain：23.9dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：30 mA
Power - Output：10W
Voltage - Rated：120 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270-2
Supplier Device Package：TO-270-2
Configuration：-

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MMRF1012NR1

Overview

The MMRF1012NR1 is a broadband RF power LDMOS transistor designed for CW large-signal output and driver applications up to 450 MHz. It operates at 50 Vdc with a typical drain efficiency of 62% and power gain of 23.9 dB at 220 MHz delivering 10 W output. The device features integrated ESD protection, qualified operation up to 50 Vdc, and a 225°C capable plastic package.

Feature Summary

Broadband characterization from 10 to 450 MHz
Integrated electrostatic discharge protection
Qualified for 50 Vdc maximum operation
High thermal capability up to 225°C junction temperature

Applications

Aerospace and defense systems
CW large-signal output stages
Driver amplifier applications

Procurement Notes

Verify the specific ordering suffix R1 confirms tape and reel packaging containing 500 units on a 24 mm wide, 13-inch reel. Confirm the component status as active or obsolete through official NXP channels before design finalization. Ensure compliance with RoHS standards and check for any REACH SVHC declarations relevant to your region.

Selection Notes

Select this component for designs requiring high linearity and ruggedness in the HF/VHF/UHF bands. The unmatched input and output require external matching networks based on series equivalent large-signal impedance parameters provided in the datasheet. Consider the TO-270-2 plastic package constraints for thermal management and board layout.

Part Context

This part belongs to the Freescale/NXP RF Power LDMOS transistor family. It utilizes N-channel enhancement-mode lateral MOSFET technology. The device is characterized using series equivalent large-signal impedance parameters rather than standard S-parameters for accurate large-signal modeling.